Simulation of Epitaxial Silicon Chemical Vapor Deposition in Barrel Reactors
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چکیده
the epitaxial silicon chemical vapor deposition by SiClq/H2 mixtures in a LPE 861 barrel reactor has been simulated by means of a detailed 2D model solved by the commercial finite element code FIDAP. Different reactor configurations (i .e., bell diameter, gas diffusers, susceptor tilting angle) and deposition conditions ( i .e . , flow rates and reactor pressure) have been examined. The simulation have been satisfactorily compared with experimental growth rate data measured along the reactor axial coordinate.
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تاریخ انتشار 2016